Flash memory is fast, but Intel’s Optane memory is faster – Intel was already able to do that with the Datacenter SSD P 4800 X show. Now comes the much faster successor, according to Intel at three times the speed: The P 5800 X uses Optane of the second generation and PCIe 4.0. In terms of sequential transfer rates, other SSDs are a bit further ahead, but Intel sets new standards when it comes to accessing random addresses: The company promises 1.5 million IOPS for exclusive reading or writing. In mixed operation, i.e. when reading and writing at the same time, it should even be 1.8 million IOPS.

At the same time, Intel promises a durability of 100 Drive Writes Per Day, the SSDs may therefore be written with their own capacity one hundred times a day within the framework of the five-year guarantee. The SSDs will come onto the market in the coming year, Intel has not yet commented on prices.

More data center SSDs Intel plans to introduce the data center SSD D7-P 5510 launch. It is equipped with TLC flash in 144 layers and should be up to 7, 68 TByte capacity. For larger space requirements, Intel will bring the P 72 in the next quarter: The SSD equipped with QLC flash should be equipped with up to 30, 72 TByte available.

If you buy 30 of it in the E1.L Format, a 1U server rack can be equipped with up to 1 PByte of memory – that is exactly what Intelv promised when introducing this “Ruler” format.

QLC has prevailed QLC Flash is also used in Intel’s desktop SSDs. The 670 p is the successor of the 665 p and is only offered as M.2 cards. It also uses the current 144 – layer version of the memory; Information on capacities and prices is not yet available.

Intel already had a combination of QLC flash and Optane memory with the H 10 in program. Here Optane serves as a fast cache for the rather slow Flash. With the H Intel used two PCIe lanes for the Optane part and the other two as access to the QLC Flash, retrofitting in existing notebooks was not possible. Whether it will be different with the H 10, which is equipped with the newer versions of the memory is yet unknown. (ll)