elizabeth-holmes’-lawyers-want-to-know-how-often-jurors-blog

Elizabeth Holmes’ lawyers want to know how often jurors blog

The lawyers of Elizabeth Holmes, ex-CEO of disgraced blood testing startup Theranos, have 112 questions for prospective jurors at Holmes’ fraud trial — including how often they check social media and whether they subscribe to Netflix.

As The Wall Street Journal reported, Holmes’ attorneys have just filed a proposed jury questionnaire for her upcoming fraud trial. The extremely detailed 45-page document outlines every possible way Holmes fears a jury could be biased, and part of that apparently involves gauging exactly how online each juror is. Among other questions, jurors are asked:

  • “Do you have an account on any social media platforms? If yes, please identify the platform(s).”
  • “How frequently do you use the platform(s) listed above?” (Answers range from “multiple times per day” to “almost never.”)
  • “How do you use social media? (for example, communicate with friends; express opinions; follow current events; etc.)”
  • “Do you belong to any groups on social media (ex. Facebook or WhatsApp groups)?”
  • “Have you ever posted messages, comments, or opinions on websites/social media, or blogged? If yes, please describe the websites or social media platforms that you have used; the types of things you have posted or blogged; and how often you have done it.”

The questionnaire underscores the sheer breadth of media coverage around Theranos, with numerous questions gauging how (and how much) jurors engage with media. On the more general side, that includes:

  • “Have you ever written a letter to the editor or called into a radio show?”
  • “How much in the news media do you believe is fair and accurate?”

Then it asks whether potential jurors read, watch, or listen to any of 46 text news outlets, 15 individual media figures, and 19 video or audio outlets — mostly news stations, but also Hulu, Netflix, and HBO. (The Verge is not named on the questionnaire, although fellow Vox Media outlets Vox and New York Magazine are.) That’s on top of questions about whether the jurors have consumed media about Holmes and Theranos.

By contrast, US prosecutors — who filed their own 51-question proposal yesterday — asked participants to list their “main sources of news” and if they follow “financial news” specifically.

Prosecutors called Holmes’ form “far too long, deeply intrusive in unnecessary ways, argumentative, and repetitive” in a court filing. Beyond the social media questions, the form asks jurors to specify things like whether any family members or close acquaintances have experience with 26 different professional fields and government agencies. But Holmes’ lawyers claimed the entrepreneur was “routinely referred to in derisive and inflammatory terms,” making the questions pertinent.

That’s not an unfair description of Holmes’ media portrayal, although getting rich off a medical device that doesn’t work is arguably worthy of derision. It’s also a little ironic, because news outlets were once criticized for hyping Theranos without sufficient fact-checking. As Holmes’ filing notes, however, Theranos’ fall is now chronicled in a well-known book (Bad Blood by John Carreyrou), documentary (HBO’s The Inventor), and multiple podcasts (Tyler Shultz’s Thicker Than Water and Rebecca Jarvis’ The Dropout), plus an upcoming Hulu miniseries starring Amanda Seyfried.

Holmes was indicted for fraud in 2018 alongside former Theranos president and COO Ramesh “Sunny” Balwani. Her trial is scheduled to begin in August.

dram-alternative-developed:-4x-higher-density-at-higher-speed-and-lower-power

DRAM Alternative Developed: 4X Higher Density at Higher Speed and Lower Power

(Image credit: Unisantis)

Unisantis Electronics, a startup led by Fujio Masuoka, the inventor of NAND memory, has developed Dynamic Flash Memory (DFM), a volatile type of memory that promises four times higher density than dynamic random access memory (DRAM) along with higher performance and lower power consumption. 

DRAM memory relies on arrays of charge storage cells consisting of one capacitor and one transistor per data bit. Capacitors charge transistors when ‘1’ is recorded into that cell and discharge when ‘0’ is recorded into that cell. The arrays are arranged in horizontal wordlines and vertical bitlines. Each column of cells consists of two ‘+’ and ‘−’ bitlines that are connected to their own sense amplifiers that are used to read/write data from/to the cells. Both read and write operations are performed on wordlines, and it is impossible to address a single bit.  

Throughout the history of DRAM, manufacturers have focused on making memory cells smaller by applying new cell structure and process technologies in a bid to increase DRAM capacity, reduce power consumption, and improve performance. 

(Image credit: Unisantis)

Unisantis’ Dynamic Flash Memory uses a Dual Gate Surrounding Gate Transistor (SGT) to eliminate capacitors and uses 4F2 gain cell structures (which are smaller than 6F2 used by DRAM today), something that significantly increases bit density (by up to four times) of memory compared to DRAMs. DFM is not the industry’s first capacitor-less type of random access memory (RAM), but previous attempts were unsuccessful.  

According to Unisantis, unlike ZRAM (where the margins between 1 and 0 have been too narrow), its DFM has significantly increased ‘1’ and ‘0’ margin results, increasing speeds and improving the reliability of the memory cell. DFM uses the PL (Plate Line) gate to ‘stabilize’ the FB (Floating Body) by separating ‘1’ write and ‘0’ erase modes, Unisantis says. 

(Image credit: Unisantis)

Unisantis is an IP licensing company that does not produce memory or commercialize its technologies. The company’s DFM will only come to market if Unisantis manages to persuade the industry (namely SoC and memory makers) to adopt its dynamic flash memory. Since DFM uses conventional CMOS materials and does not require very sophisticated manufacturing methods, it may indeed be commercialized. Meanwhile, the company’s Dual Gate Surrounding Gate Transistor (SGT) IP could be licensed by various parties that want to take advantage of GAAFET-type transistors. 

The DFM technology was described by its inventors, Drs. Koji Sakui and Nozomu Harada earlier this month at the 13thIEEE International Memory Workshop.