Although the focus of SSDs today is on M.2-connected drives, SATA bus drives also still have their place in most configurations. Samsung has now expanded its offering of SATA bus drives with new 870 EVO series SSDs.

Samsung 870 EVO SSDs are based on the company’s latest generation of V-NAND chips using TLC-type cells, as well as the company’s own MKX controller circuit. Samsung has not officially announced how many layers of V-NAND chips exactly form, but most likely it is a 128 layered chip. The same chips are also used in the company’s flagship 980 Pro-M.2 stations.

Samsung’s new drives will be available in the smallest 250 gigabytes and at best with a capacity of as much as 4 terabytes and will have a cache depending on the size of the drive 512 MB – 4 GB LPDDR4 memory. The sequential read and write speeds of the drives, regardless of size, are 560 and 530 MB / s and the random read and write speeds 98 000 and 44 IOPSia. The write strength of the drives is multiplied by 0.3 DWPD (Drive Writes per Day), which means 150 – 2400 terabytes of write strength depending on the capacity of the drive. The stations also have a 5-year warranty on write-resistance.

The recommended price for the Samsung 870 EVO 311 GB model is 44, 99 euro, 500 GB model 76, 98, EUR 1 161, 99 EUR, 2 TB 311, 99 and 4 TB 632, 99

Source: Samsung press release (e-mail)