further-pixel-6-details-–-whitechapel-matches-sd870,-120hz-display,-5,000mah-battery

Further Pixel 6 details – Whitechapel matches SD870, 120Hz display, 5,000mAh battery

Yesterday we got a report about Google’s upcoming Pixel 6 and 6 Pro and their custom Whiechapel chip and now we have some more details to add to that courtesy of another insider.

Google’s custom Whitechapel chip, designed in cooperation with Samsung on its 5nm process, will reach the level of performance of a Snapdragon 870. Google will focus on the machine learning and artificial intelligence aspect of the chip to further enhance its performance. The graphics on the Whitechapel chipset will be handled by a Mali GPU, which reportedly works well under load.

Well yes, Whitechapel is a 5nm chip with current performance on PVT units closer to SD870, they are not trying to match SD888. Google’s focus is on ML & so the raw AI performance is matched to that of other leading mobile chips. Plus that Mali GPU is performing good under stress.

— 𓆩Yogesh𓆪 (@heyitsyogesh) May 24, 2021

According to yesterday’s report by Weinbach, the Google Pixel 6 will have a FullHD+ display with a maximum refresh rate of 120Hz, while the Pixel 6 Pro will have a QHD+ with the same 120Hz refresh.

samsung-details-its-isocell-hm3-sensor-in-new-video

Samsung details its ISOCELL HM3 sensor in new video

Earlier this year, Samsung announced its ISOCELL HM3 – a 1/1.33” sensor with 108MP resolution which we saw in action on the Galaxy S21 Ultra. Now, we get a new official video which hints the sensor might soon make its way to other flagship offerings from Samsung or and flagship phones from other makers.

The HM3 brings 9-to-1 pixel binning with an effective pixel size of 2.4µm. The sensor captures 12-bit images with 12MP resolution in default and features Smart-ISO Pro that upscales HDR content by capturing simultaneous low and high ISO shots to balance out ghosting on moving objects. Video capture tops out at 8K resolution while slow-motion videos can go up to 240fps at FHD resolution.

Given the timing of the new video, Samsung could be hinting at a possible new Galaxy flagship featuring the ISOCELL HM3 or that it will be offering the sensor to other OEMs.

samsung-launching-new-tizen-powered-‘smart-monitors’

Samsung launching new Tizen-powered ‘Smart Monitors’

Samsung has been growing the number of displays it sells over the last few years, adding professional-grade and gaming monitors to its line-up. Now, Samsung is attempting to add another category to its list – Smart Monitors. 

Samsung’s Smart Monitor range is expanding this week, with a new 43-inch 4K M7 model and a smaller, 24-inch M5 model with 1080p resolution. The key thing that sets these monitors apart is the introduction of Smart TV technology, powered by Samsung’s own Tizen processors.

Samsung wants these to be “do-it-all” displays, good for work, gaming and general entertainment, which will be accessible through a Smart TV style UI with support for apps like Netflix and Amazon Prime Video. These Smart Monitors also feature apps for remote desktop connections and productivity apps like Microsoft Office. This functionality essentially turns the monitor into its own all-in-one computer.

Samsung now has Smart Monitors in 43-inch and 32-inch 4K options, as well as 1080p versions from 24-inches up to 32-inches, with prices starting at $229.99.

KitGuru Says: The lines between PC monitors and TVs has been getting blurry over the years. What do you think of Samsung’s ‘Smart Monitors’? 

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phison-ps5018-e18-controller-with-micron-176l-tlc-preview:-unleashing-the-beast

Phison PS5018-E18 Controller With Micron 176L TLC Preview: Unleashing the Beast

(Image credit: Tom’s Hardware)

Features and Specifications

Phison’s PS5018-E18 is a high-performance PCIe 4.0×4 NVMe SSD controller that has flooded the market in many of the newest and fastest-performing SSDs. It offers up very fast sequential performance but has been outshined in random responsiveness by top picks like Samsung’s 980 Pro and WD_Black SN850 due in part to Micron’s B27B 96-Layer TLC flash holding it back. Today, we’re taking a deep look at the company’s next iteration that gets a little help from Micron’s fastest flash yet. 

While the first generation of E18-based NVMe SSDs used flash that interfaced with the controller flash at somewhat restricted speeds of 1,200 MTps, our second-gen sample is no longer shackled by this bottleneck. Now, featuring Micron’s latest B47R 176-layer TLC flash operating at speeds of up to 1,600 MTps, our new sample offers much more competitive performance. Still, this is only a preview, and while SSDs based on this flash due to hit the market soon, they will only hit the market after a few more firmware revisions.  

Specifications

Product 500GB 1TB 2TB
Pricing $99.99 $159.99 $319.99
Capacity (User / Raw) 500GB / 512GB 1000GB / 1024GB 2000GB / 2048GB
Form Factor M.2 2280 M.2 2280 M.2 2280
Interface / Protocol PCIe 4.0 x4 / NVMe 1.4 PCIe 4.0 x4 / NVMe 1.4 PCIe 4.0 x4 / NVMe 1.4
Controller Phison PS5018-E18 Phison PS5018-E18 Phison PS5018-E18
DRAM DDR4 DDR4 DDR4
Memory Micron 176L TLC Micron 176L TLC Micron 176L TLC
Sequential Read 6,500 MBps 7,000 MBps 7,000 MBps
Sequential Write 2,850 MBps 5,500 MBps 6,850 MBps
Random Read 170,000 IOPS 350,000 IOPS 650,000 IOPS
Random Write 600,000 IOPS 700,000 IOPS 700,000 IOPS
Security AES 256-bit encryption  AES 256-bit encryption  AES 256-bit encryption 

Phison’s PS5018-E18 supports both TLC and QLC flash and can address capacities of up to 8TB, but most retail products will ship in the popular 1TB and 2TB capacities. In terms of performance specifications, Phison’s E18 hasn’t changed much besides the faster 1,600 MTps flash transfer rate. Sequential speeds are rated for up to 7.4/7.0 GBps read/write and in terms of random performance, and the company claims the SSD controller is capable of 1 million random read/write IOPS, given the proper flash and tuning. 

Phison seems to be moving away from full dynamic SLC caching in the traditional sense. Instead, its SLC caching algorithms are adapting to better suit not only consumer workloads but heavy prosumer workloads, too. We will cover this more in-depth later in the article. 

Phison didn’t reveal anything about end-product endurance ratings with this new flash, but it may help improve endurance ratings over current-gen devices. The Phison E18 still features the company’s fourth-generation LDPC ECC and RAID ECC along with a DDR ECC engine and end-to-end data path protection to ensure your data is programmed and read reliably over the product’s useful lifespan. It also supports various security options such as Pyrite, AES 256, SHA 512, RSA 4096, and TCG Opal. Additionally, it comes with S.M.A.R.T. data reporting and Trim support and secure erase and crypto erase capability. 

A Closer Look 

The E18 interfaces with the host over a PCIe 4.0 x4 link and is NVM 1.4 compliant. Our 2TB sample comes in an M.2 2280 double-sided form factor, but smaller capacities come in single-sided form factors for broad compatibility with the latest ultra-thin mobile devices. This is in contrast to Samsung and WD M.2 SSDs, all of which come only in single-sided form factors.

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The PS5018-E18 controller is an eight-channel, DRAM-based design. Our 2TB sample features two 1GB SK hynix DDR4 ICs, one on each side of the PCB. It leverages a Penta-core design with three single-core Cortex R5 CPUs handling the host/read/write tasks while an additional R5 CPU, in a lower-clocked dual-core configuration, acts as a co-processor. The E18’s primary cores are clocked much higher than the older E16’s cores, at 1 GHz versus 733 MHz.

The E18 comes with CoXPorcessor 2.0 technology, which offloads some of the firmware code from the primary cores to the dual-core R5 to ensure responsive QoS when hammered with heavy sustained workloads and aid power efficiency. One of the co-processor cores optimizes NAND die-queues to the flash while the other is for managing the DRAM/NAND tables.

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The controller is manufactured on TSMC’s 12nm process technology and comes with multiple features to keep thermals under control while operating at high speeds. It features ASPM and ASPT support, can transition into the L1.2 low power state to sip just 3mW at idle, and can thermal throttle to preserve data integrity over performance.

Phison sent over our sample with a sleek-looking heat sink, but this heat sink does not necessarily indicate that retail models will require heat sinks to keep them cool under most consumer workloads. Although, when this controller is paired with 2TB of flash, it can gulp down over 8 watts of power under sustained load, which can create quite a bit of heat.

(Image credit: Tom’s Hardware)

Speaking of the flash, our 2TB sample comes with thirty-two 512 Gb dies of Micron’s new B47R 176L TLC, aligning with the controller’s native chip enable capability to optimize interleaving, and thus, performance. Micron’s 176L TLC offers a significant improvement over previous generations, and not just due to its high layer count. 

This flash features the company’s new replacement-gate architecture that combines charge traps with CMOS-under array (CuA) technology, allowing for roughly a 30% smaller die size than its competitors. Enabled through multiple advancements in the new architecture and firmware support, operating interface speeds clock in at 1,600 MTps, which improves read and write speed by roughly 35% compared to the company’s previous-generation floating-gate 96L TLC.

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Architecturally, Micron replaced the polysilicon control gates with metal, and it uses a different etching method compared to traditional NAND. This reduces resistance, thus allowing the program pulse to ramp up quickly, reducing programming complexities and overhead. The design reduces the electric field duration on the circuits since they can be programmed much more quickly. Micron also increased the etch diameter, allowing for more structural stability as the company ramps layer counts in future generations of the flash. 

Additionally, in traditional NAND, cell-to-cell capacitive coupling issues limit performance, but by utilizing a nonconductive layer of silicon nitride (SiN) acting as a NAND storage cell, the replacement-gate design demonstrates almost no capacitance between cells.

These changes, along with other cell geometry adjustments, directly improve performance, endurance, conserve energy, and allow for increased storage capacity, especially as Micron continues to develop newer iterations of its flash. 

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